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Faculty Member Profile

Dr. Mohammad Mahfuz Alam
Assistant Professor
Physics
PhD
+8801990244833
mahfuzalam08@yahoo.com

Research Interest:
  • Si/Ge Heterostructures
  • Nanoelectronics
  • Optoelectronics
  • Spintronics

    • List of Publications:
    1. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano "Mechanism of crack formation in strained SiGe(111) layers" Journal of Crystal Growth 589 (2022) 126672 https://doi.org/10.1016/j.jcrysgro.2022.126672
    2. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano, "Drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si" Applied Physics Express 14, 025502 (2021) DOI: /10.35848/1882-0786/abd4c5
    3. Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, and Yoshiaki Nakamura, "Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators" Appl. Phys. Lett. 117, 141602 (2020) DOI: /10.1063/5.0023820 4. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano, "Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates" Materials Science in Semiconductor Processing 117 (2020) 105153 DOI: /10.1016/j.mssp.2020.105153
    5. Tatsuhiko Taniguchi, Takafumi Ishibe, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura "High Thermoelectric Power Factor Realization in Si-rich SiGe/Si Superlattices by Super-Controlled Interfaces" ACS Appl. Mater. Interfaces 2020, 12, 22, 25428-25434
    6. Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Takahiro Hinakawa, Ryoya Hosoda, Kosei Mizuta, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura, "Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots" Jpn. J. Appl. Phys. 59, SFFB01 (2020) DOI: /10.7567/1347-4065/ab5b58
    7. Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada, and Kohei Hamaya, "Strain engineering of Si/Ge heterostructures on Ge-on-Si platform" ECS Transactions, 98 (5) 267-276 (2020)
    8. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano, "Increased critical thickness for strained SiGe on Ge-on-Si(111)" ECS Transactions, 98 (5) 499-503 (2020)
    9. Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano, "Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111)" Appl. Phys. Express 12, 081005 (2019)
    10. Noboru Okamoto, Ryoto Yanagisawa, Roman Anufriev, Md. Mahfuz Alam, Kentarou Sawano, Masashi Kurosawa and Masahiro Nomura "Semiballistic thermal conduction in polycrystalline SiGe nanowires" Appl. Phys. Lett. 115, 253101 (2019); https://doi.org/10.1063/1.5130659
    11. Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano and Yoshiaki Nakamura "High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity" Appl. Phys. Lett. 115, 182104 (2019); https://doi.org/10.1063/1.5126910
    12. Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, Yoshiaki Nakamura, "Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures" Materials Today Energy 13, 56-63 (2019)
    13. Md. Mahfuz Alam, Yusuke Hoshi, K. Sawano, "Structural properties of compressive strained Ge channels fabricated on Si(111) and Si(100)" Semicond. Sci. Technol. 33, 124008 (2018)
    14. Dr. Md. Kamrul Alam Khan and Md. Mahfuz Alam "Performance of PKL (Pathor Kuchi Leaf) electricity and its use in Bangladesh" January 2010 KMUTNB Int. J Appl. Sci. Technol. 1(1):15-20
    List of Conference Presentations:
    1. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano "Observation of photoluminous from SiGe/Ge MQW on Ge-on-Si(111)" ISNTT 2021, December 14-17, 2021 online.
    2. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano "Suppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates"21st ICMBE 2021, September 6-9, 2021 online.
    3. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano "Suppression of crack formation in strained SiGe layers by patterning of Ge-on-Si substrates" EMRS 2021spring meeting, May 31-June 4, 2021 online.
    4. Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya "Strain engineering of Si/Ge heterostructures on Ge-on-Si platform" (invited) PRiME 2020, October 4-9, 2020 online
    5. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano "Increased critical thickness for strained SiGe on Ge-on-Si(111)" PRiME 2020, October 4-9, 2020 online
    6. Md. Mahfuz Alam and Kentarou Sawano, "Si/Ge Heterostructures with Various Surface Orientations" EMN Epitaxy 2019, Amsterdam, Netherlands, June 2019
    7. Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano "Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111)" ISCSIⅧ (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019
    8. Md. Mahfuz Alam, Kazuya Okada, Yuya Wagatsuma, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano "Strain states and critical thickness of Si1-xGex epitaxial layers on Ge-on-Si(111)" ISTDM / ICSI 2019 Conference, Madison, USA, June 2019
    9. Md. Mahfuz Alam, K. Sato, Y. Sakamoto, K. Sawada, K. Sawano, "Structural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)" ISTDM / ICSI 2018 Conference, Potsdam, Germany, May 2018
    10. Kaoru Okamoto, Ryoji Yanagisawa, Md. Mahfuz Alam, Kentarou Sawano, Masashi Kurosawa, Masahiro Nomura, "Quasi-ballistic heat transport in Si1-x Gex nanowires depending on temperature and composition",66th Annual Meeting of The Japan Society of Applied Physics, Tokyo Institute of Technology, Tokyo, Japan, March 2019
    11. Tatsuhiko Taniguchi, Takashi Ishibe, Md. Mahfuz Alam, Kentarou Sawano, Yoshiaki Nakamura "Further high thermal conductivity of Si-rich SiGe / Si superlattice", 66th Annual Meeting of The Japan Society of Applied Physics, Tokyo Institute of Technology, Tokyo, Japan, March 2019
    12. Kaoru Okamoto, Ryoji Yanagisawa, Mr. Mahfuz Alam, Kentarou Sawano, Masahiro Nomura "Considerations on Heat Transport in SiGe Nanowires at Low Temperature",79th Fall Meeting of the Japan Society of Applied Physics, Nagoya International Conference Place, Nagoya, Japan, September 2018
    13. Kaoru Okamoto, Ryoji Yanagisawa, Mr. Mahfuz Alam, Kentarou Sawano, Masahiro Nomura "Ballistic Heat Transport in SiGe Nanowires",65th Annual Meeting of The Japan Society of Applied Physics, Waseda University, Japan, March 2018
    14. Shunya Sakane, Watanabe Kentaro, Naruse Nobuyasu, Md. Mahfuz Alam, Sawano Kentarou, Mori Shinya, Nakamura Yoshiaki, "Output Factor Determination Mechanism in Nanostructured Si Thin Film", 65th Annual Meeting of The Japan Society of Applied Physics, Waseda University, Japan, March 2018
    15. Taniguchi Tatsuhiko, Watanabe Kentarou, Md. Mahfuz Alam, Sawano Kentarou, Nakamura Yoshiaki, "Output Factor Manipulation of Si / SiGe Superlattices by Interface Control", 65th Annual Meeting of The Japan Society of Applied Physics, Waseda University, Japan, March 2018
    16. Taniguchi Tatsuhiko, Okuhata Ryo, Watanabe Kentarou, Md. Mahfuz Alam, Sawano Kentarou, Fujita Takeshi, Nakamura Yoshiaki, "Output factor increase of SiGe / Si superlattice by composition control", 78th Fall Meeting of the Japan Society of Applied Physics, Fukuoka International Conference Place, Fukuoka, Japan, September 2017
    17. Shunya Sakane, Watanabe Kentaro, Fujita Takeshi, Md. Mahfuz Alam, Sawano Kentarou, Nakamura Yoshiaki, "Influence of Heat Treatment on Thermoelectric Properties of Nano Dot Containing Si Thin Film", 78th Fall Meeting of the Japan Society of Applied Physics, Fukuoka International Conference Place, Fukuoka, Japan, September 2017

    Research Gate:
    https://www.researchgate.net/profile/Mohammad_Alam120

    Teaching/Research Experiences:    

  • Assistant Professor:
    Department of Physics, University of Barishal, Bangladesh. (4th December 2020 to till date)   
  • Research Assistant:
    Advanced Research Laboratories, Tokyo City University, Japan. (September 21, 2016, to Sept. 2019).   
  • Lecturer:
    Department of Physics, University of Barishal, Bangladesh. (March 14, 2016, to December 03, 2020)
  • Lecturer:
    Department of Basic Science, Primeasia University, Banani, Dhaka, Bangladesh. (June 07, 2011, to March 13, 2016)

    • Member of Professional Society:
    American Physical Society (APS)
    Bangladesh Physical Society (BPS)
    International Scholarship:
    1)    SANO Scholarship-2018 (Tokyo City University, Japan)
    2)    SANO Scholarship-2017 (Tokyo City University, Japan)

    Contact Us

    Kornokathi, Barishal-8254, Bangladesh
    ☎ Phone: 0431-2177771-77.
    📠 Fax: 0431-61117
    ✉ Email: registrar@bu.ac.bd
    Web: www.bu.ac.bd

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